exercises:2017_uzh_cmest:defects_in_silicon
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exercises:2017_uzh_cmest:defects_in_silicon [2017/10/31 18:20] – tmueller | exercises:2017_uzh_cmest:defects_in_silicon [2020/08/21 10:15] (current) – external edit 127.0.0.1 | ||
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<note tip>You may have to employ some of the techniques mentioned in [[PDOS|Projected density of states and Band structure for WO$_3$]] to make the calculations converge.</ | <note tip>You may have to employ some of the techniques mentioned in [[PDOS|Projected density of states and Band structure for WO$_3$]] to make the calculations converge.</ | ||
- | Finally, calculate the band structure for the silicon8 geometries (with and without vacancy) as shown in the exercise [[PDOS|Projected | + | ====== Observing changes |
- | <note tip>You can use [[http:// | + | Finally we are going to look at the change of the density of states due to the vacancy: |
- | <code xyz silicon.xyz> | + | Alter the input files for the small geometry (the '' |
- | 8 | + | |
- | Bulk Silicon | + | Now do a geometry optimization on the '' |
- | Si 0 0 0 | + | |
- | Si 0 2.7153487500 | + | |
- | Si 2.7153487500 | + | |
- | Si 2.7153487500 | + | |
- | Si 4.07302312500 | + | |
- | Si 1.35767437500 | + | |
- | Si 1.35767437500 | + | |
- | Si 4.07302312500 | + | |
- | </ | + | |
- | </ | + |
exercises/2017_uzh_cmest/defects_in_silicon.1509474025.txt.gz · Last modified: 2020/08/21 10:15 (external edit)